SN74CBTU4411

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分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 模拟开关电路

描述: 适用于 DDR-II 应用的 2.5V、4:1 11 通道模拟多路复用器

物料参数

Protocols:DDR2
Configuration:4:1
Number of channels:11
Bandwidth (MHz):400
Supply voltage (max) (V):1.9
Supply voltage (min) (V):1.7
Ron (typ) (mΩ):10000
Input/output voltage (min) (V):0
Input/output voltage (max) (V):1.9
Supply current (typ) (µA):700
ESD HBM (typ) (kV):2.5
Operating temperature range (°C):0 to 85
ESD CDM (kV):0.75
Input/output continuous current (max) (mA):100
COFF (typ) (pF):2.5
CON (typ) (pF):4.6
OFF-state leakage current (max) (µA):10
Propagation delay time (µs):0.000297
Ron (max) (mΩ):17000
RON flatness (typ) (Ω):1.5
Turnoff time (disable) (max) (ns):2.1
Turnon time (enable) (max) (ns):2.1
VIH (min) (V):1.1
VIL (max) (V):0.66
Protocols:DDR2
Configuration:4:1
Number of channels:11
Bandwidth (MHz):400
Supply voltage (max) (V):1.9
Supply voltage (min) (V):1.7
Ron (typ) (mΩ):10000
Input/output voltage (min) (V):0
Input/output voltage (max) (V):1.9
Supply current (typ) (µA):700
ESD HBM (typ) (kV):2.5
Operating temperature range (°C):0 to 85
ESD CDM (kV):0.75
Input/output continuous current (max) (mA):100
COFF (typ) (pF):2.5
CON (typ) (pF):4.6
OFF-state leakage current (max) (µA):10
Propagation delay time (µs):0.000297
Ron (max) (mΩ):17000
RON flatness (typ) (Ω):1.5
Turnoff time (disable) (max) (ns):2.1
Turnon time (enable) (max) (ns):2.1
VIH (min) (V):1.1
VIL (max) (V):0.66